A Dynamic Simulation on Single Gate Junctionless Field Effect Transistor Based on Genetic Algorithm

Roya Norani

Abstract


We study the I-V characteristics of single gate junctionless field effect transistor by device simulation. The sample FET is simulated at different channel lengths and the I-V curve changes due to variations of and channel length have been systematically analyzed. The new approach exhibited here utilizes a Genetic Algorithm to select the important physical and heuristic elements in order to define a compact yet precision model for Single Gate Junctionless Field Effect Transistor characteristic. The results show that the mean absolute percent error (MAPE), root-mean-square deviation (RMSD) and standard deviation error (SDE) were at an acceptable level.

Keywords


Single Gate; Junctionless Field Effect Transistor; Device Simulation; Genetic Algorithm

Full Text:

PDF


Lululemon Black Friday cheap nfl jerseys Lululemon factory Outlet ny Black Friday discount tiffany outlet wholesale soccer jerseys online oakley black friday cheap nhl jerseys china cheap nfl jerseys north face black friday sale cheap nfl jerseys online Jordans Black Friday Sale 2015 Cheap Moncler Cyber Monday moncler outlet cheap soccer jerseys moncler outlet black friday cheap authentic nfl jerseys north face cyber monday Louboutin Black Friday canada wholesale cheap nfl jerseys lululemon cyber monday 2015 cheap nfl jerseys from china 2015 Cheap Moncler Black Friday Sale Moncler Cyber Monday 2015 cheap jerseys Lululemon Cyber Monday Sale jordans cyber monday deals 2015 Black Friday deals Lululemon 2015 jordan black friday 2015 Moncler Jackets Black Friday Sale 2015 Louboutin Pas Cher Black Friday 2015 Canada Lululemon north face black friday cheap wholesale soccer jerseys